Abstract - The VWA 5000056 AA is a power distributed amplifier designed on a 0.15 μm pHEMT process. The devices is capable of more than +27 dBm of output power at saturation regime, and provides more than 15 dB of gain from 1 to 20 GHz with less than 1 dB of flatness with an excellent group delay between 6-18 GHz in typical application. The design has been optimized to provide high efficiency, supply current is as low as 290 mA with Vd=+8V.
Abstract - The VWA 5000057 AA, is a wide band GaAs MMIC - 6-bit phase shifter - Digital control logic The digital control logic allows for parallel data input, so phase shift may be changed instantaneously. This Digital Phase Shifter has an LSB of 5.625° and controlled by 6 digital binary inputs, compatible with LVCMOS / TTL levels. This device uses a single -7.5 V Bias supply voltage.
Abstract - The VWA 5000059 AA is a 2 Stages analog High Power MMIC operating in the frequency range from 7.5 GHz to 11.5Ghz. The device is a 2 stages cascaded amplifier designed in 0.25μm pHEMT process. The device is capable of more than +40dBm saturated output power, and provides 25dB of small signal gain from 7.5GHz to 11.5GHz with less than +/- 1.5dB of gain variation. The design has been optimized to provide high efficiency, supply current is as low as 3.2A with +8V supply voltage, when delivering +40dBm output power.
Abstract - The VWA 5000060 AA is a medium power amplifier designed on a 0.15 μm pHEMT process. The device is capable of +24dBm of output power at saturation regime. And up to +22dBm of output power at 1 dB of gain compression. It provides up to 11 dB of linear gain from 2.5 to 5GHz. The supply current is as low as 180 mA when operating with VD=+4V.
Abstract - The VWA 5000061 AA is a gain block amplifierdesigned on a 0.15 μm pHEMT process. The device delivers +15.5dBm of output power at saturation regime and more than +13.5dBm of output power at 1 dB of gain compression (P1dB). It provides a 0.2dB flat 13 dB of linear gain from 8.5GHz to 12GHz. The supply current is 70 mA when operating with a single power supply VD=+5V.
Abstract - The VWA 5000062 AA is a distributed amplifier designed on a 0.15μm pHEMT process. The device is capable of more than +22dBm of output power at saturation regime, up to 40GHz. And more than +16dBm of output power at 1dB of gain compression, up to 40GHz. It provides 15dB of linear gain from DC to 40GHz, with an excellent group delay. The design has been optimized to provide high efficiency. The supply current is as low as 180mA when operating with VD=+6V.The die include a 50Ω transmission line for calibration system.
Abstract - The VWA 5000063 AA is a double transimpedance amplifier designed on a 0.15 μm pHEMT process. The two embedded devices are capable of more than +10dBm of output power at saturation regime. And more than +8dBm of output power at 1 dB of gain compression regime. It provides 16dB of linear gain for each sub-band. When operating with VD=+ 2.5V, with a small consumption of 25mA. The design has been optimized to provide high signal to noise ratio.
Abstract - The VWA 5000068 AA is a block amplifier designed on a 0.15 μm pHEMT process. The device is capable of more than +20dBm of output power at saturation regime and more than +17dBm of output power at 1 dB of gain compression. It provides a flat 17 dB of linear gain from 2.9GHz to 3.4GHz. The supply current is 200 mA when operating with a single power supply VD=+4.5V.
Abstract - The VWA 5000069 AA is a block amplifier designed on a 0.15 μm pHEMT process. delivers +15dBm of output power at saturation regime and more than +13dBm of output power at 1 dB of gain compression (P1dB). It provides a flat 14 dB of linear gain from 2.9GHz to 4.3GHz. The supply current is 195 mA when operating with a single supply voltage VD=+4.5V.
Abstract - The VWA 5000083 AA is a travelling wave dis-tributed amplifier designed on a 0.15μm pHEMT process.The device is capable of more than +10dBm of output power at saturation regime, up to 50GHz. And more than +7dBm of output power at 1 dB of gain compression, up to 50GHz. It provides more than 8dB of linear gain from DC to 70GHz. The design integrates a VD internal access that’s allow the user to bias the Drain access through the Drain resistor load helping to avoid externalBias-T structure. The supply current is as low as 80mA when operating with VD= +7V.