by Vectrawave | 3 Jun 2025
The VM164F is a High Power Amplifier MMIC operating in the frequency range from 8 to 10.75GHz. The device is developed on a 250nm GaN/SiC process and is internally matched through 50Ω RF accesses. It provides an output power of 50W, and associated Power Added...
by Vectrawave | 4 Apr 2025
VM209F is a packaged 10W Gallium Nitride (GaN) wideband 2-18GHz 3 stages amplifier. It’s designed specifically with high power gain greater than 21dB. It is manufactured with a 150nm pHEMT GaN process and is especially suited for radar applications. The device...
by Vectrawave | 3 Apr 2025
VM209D is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high power gain of 22dB and wide bandwidth capabilities of 2 to 18GHz. The VM209D delivers 40dBm of saturated output power. This MMIC is manufactured on a 150nm GaN...
by Vectrawave | 3 Apr 2025
VM215Q is a self-biased wideband amplifier operating in the frequency range 2 to 20GHz under 5V. The device is packaged in a 5×5 mm 24 leads Plastic Surface Mount Package (ROHS). This component uses VM215D Vectrawave die. The device has a small signal gain of...
by e-ssentiel | 14 Oct 2024
The VM103D, is a wide band GaAs MMIC: – 5-bit attenuator – Digital control logic The digital control logic allows for parallel data input, so attenuation value may be changed instantaneously. This broadband Attenuator has an LSB of 0.9dB, and controlled by...
