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DC to 27GHz / 13dB / 18dBm
Low Noise Amplifier

The VWA5000015AB is a wide band distribu- ted amplifier designed on a 150nm pHEMT pro- cess that operates up to 31GHz, with flat group delay.
The device is capable of more than 19 dBm saturated output power, and provides more than 13dB of gain from DC to 27GHz with less than 1dB of flatness. It integrates an output power detector for monitoring function. A 24dB tap cou- pler delivers the image of the output level on a dedicated pad, and a peak detector is available on the die. Connecting the input of the peak de- tector to the tap coupler output will generate a DC signal for monitoring the output signal level in the RF spectrum. A reference diode is also avai- lable for temperature reference information of the detector function.




  • Distributed amplifier pHEMT GaAs MMIC.
  • Frequency Range:
    – DC to 27GHz @ 1dB flatness.
    – DC to 31GHz @ 3dB cut_off.
  • Bessel response up to 40GHz with flat group delay.
  • 50ΩΩSingle ended RF input and output, DC coupled.
  • Integrated output power tap coupler.
  • Integrated output level detection.
  • Reference diode output.
  • OP1dB Up to 15dBm (DC to 27GHz)
  • PSAT Up to 18dBm
  • Small signal gain : 13dB from DC to 27GHz
  • Power supply: 125mA @ +8V
  • Chip size: 2.97 x 1.52 x 0.10 (mm)