The VWA5000025AA is a distributed amplifier designed on a 0.15μm pHEMT process.
The device is capable of more than +16dBm of output power at saturation regime, up to 40GHz. It provides more than +14dBm of output power at 1 dB of gain compression, up to 40GHz.The linear gain is of 11dB from DC to 40GHz, with an excellent group delay. The design has been optimized to provide high efficiency. The supply current is as low as 100mA when operating with VD= +8V.
This device needs a RF output external bias-tee to bias the drain and a RF input external DC-Block.
VM025D
DC to 45GHz / 11dB Gain / 17dBm PSAT
Traveling Wave amplifier
Traveling Wave amplifier
WIDEBAND AMPLIFIERS
DatasheetFeatures
- Wideband distributed amplifier pHEMT GaAs MMIC
- Wide band: DC to 45GHz.
- Flat group delay (up to 64Gbps)
- 50ΩRF Single ended input and output
- DC coupled In, DC coupled Out
- P1dB:+14dBm DC to 40GHz
- PSAT >+16dBm DC to 40GHz
- Small signal gain: >10dB from DC to 45GHz
- Power supply: 100mA @ +8V
- Chip size: 3.02 x 1.57 x 0.1 (mm)