The VM087D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 7.5 to 8.5GHz.
The MMIC is developed on 250nm GaN/SiC process and is internally matched through 50Ω RF accesses. It can provide an output power up to 40W and associated power added efficiency of 39% in pulsed mode.
VM087F
7.5 to 8.5GHz - 40W
GaN/SiC Power Amplifier
GaN/SiC Power Amplifier
POWER AMPLIFIERS > 3W
DatasheetFeatures
- Frequency range 7.5 – 8.5GHz
- Output Power 46dBm @Pin = 25dBm
- PAE 39% @Pin = 25dBm
- Linear Gain 29dB
- DC bias VD = +28V, lDQ = 320mA, (VG = -2.4V Typical)
- Chip size 4×4.8×0.1(mm)