The VM088D is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 8 to 10.5GHz.
The MMIC is developed on 250nm GaN/SiC process and is internally matched through 50Ω RF accesses. It can provide an output power up to 40W and associated power added efficiency of 38% in pulsed mode.
VM088D
8 to 10.5GHz - 40W
GaN/SiC Power Amplifier
GaN/SiC Power Amplifier
POWER AMPLIFIERS > 3W
DatasheetFeatures
- Frequency range 8 – 10.5GHz
- Output Power >46dBm @Pin = 23dBm
- PAE 38% @Pin = 23dBm
- Linear Gain 31dB
- DC bias VD = +28V, lDQ = 350mA, VG = -2.35V (Typical)
- Chip size 5 x 4.8 x 0.1 (mm)