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2 to 18GHz - 10W GaN/SiC
Power Amplifier

The VWA5001165AA is a Microwave Monolithic Integrated Circuit (MMIC) designed in HEMT (High Electron Mobility Transistor) structure for operating frequency range from 2 to 18GHz.
The MMIC is developed on a 250nm GaN/SiC process and is internally matched for 50Ω RF accesses.
It provides an output power of 10W, and associated Power Added Efficiency of 22% typical in Continuous Wave (CW) mode.




  • Operating frequency range: 2 to 18GHz
  • Output Power: 40dBm @Pin= 24dBm
  • PAE: 22% @Pin= 24dBm
  • Linear Gain: 20dB
  • DC bias: VD= +28V, IDQ= 1000mA, VG= -2.2V (Typical)
  • Chip size: 2.5 x 4.8 x 0.1mm