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DC to 50GHz / 10dB Gain / 20dBm PSAT
Wideband Distributed Amplifier
Internal Active Bias-Tee

The VWA5000078AA is a wideband distri- buted amplifier designed on a 0.15μm pHEMT process.
The device is capable of more than +19dBm of output power at saturation regime, up to 50GHz and more than +16dBm of output power at 1dB of gain compression, up to 30GHz. It pro- vides more than 10dB of linear gain from DC to 50 GHz with a positive slope up to 50GHz when operating with VD= +8V, with an excellent group delay. The design integrates an internal active drain biasing system that allows to avoid external Bias-Tee structure to feed the drain current. The supply current is as low as 135mA when opera- ting with VD= +8V.




  • Distributed amplifier pHEMT GaAs MMIC
  • Wide band: DC to 50GHz
  • Internal Active Drain Biasing System
  • Flat group Delay
  • 50ΩRF Single ended input and output
  • DC coupled IN, DC coupled Out
  • P1dB >+16dBm DC to 30GHz
  • High output Psat: +20dBm (typical)
  • Small signal gain: >10dB from DC to 50GHz
  • Power supply: 135mA @ +8V
  • Chip size: 2.3 x 1.8 x 0.1 (mm)