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HIGH POWER AMPLIFIERS > 3W

Technology
GaAs
GaAs
GaN
GaN
GaN
GaN
GaAs
GaAs
GaAs
GaAs
GaN
GaN
GaN
Frequency
Min GHZ
8.0
8.5
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
32.0
Frequency
Max GHz
12.0
12.0
10.5
10.5
11.0
11.0
11.0
11.0
11.0
11.0
10.7
10.7
36.0
Gain dB
25.0
25.0
46.5
30.0
27.0
26.0
22.0
25.0
25.0
25.0
29.0
29.0
18.0
Pout dBm
40.0
40.0
46.5
46.5
43.5
43.0
37.0
40.0
40.0
40.0
47.0
47.0
43.0
PAE %
35
35
38
35
40
38
40
40
40
40
38
38
28
Voltage V
+8
+8
28
28
28
28
8
+8
+8
8
28
28
24
Idq (mA)
3700
3700
350
350
240
240
1550
2800
3200
3200
550
550
640
Package
mm x mm
Die 4.5 x 3.9
Flange 11.0 x 17.3
Die 5.0 x 4.8
QFN 7.0 x 7.0
Die 5.0 x 2.4
QFN 7.0 x 7.0
Die 4.4 x 1.49
Die 4.4 x 2.5
TBD
Flange 11.0 x 17.3
Die 5.0 x 4.8
Flange 11.0 x 17.3
Die 4.5 x 4.5
Status
Production
Production
New version November 2025
New version December 2025
New version November 2025
New version December 2025
Production
Production
Under development
Under development
Production
Under development
March 2026

MEDIUM POWER AMPLIFIERS < 3W

Technology
GaAs
GaAs
GaAs
GaAs
Frequency
Min GHz
2.5
8.5
9.2
24.0
Frequency
Max GHz
5.0
12.0
10.5
30.0
Gain dB
11.0
13.0
22.0
27.0
OP1dB dBm
23.0
14.5
22.0
21.0
Psat dBm
24
16
23
23
Drain
Voltage V
4
5
8
4
Idd (mA)
180
70
120
120
Package
mm x mm
Die 3.02 x 2.97
Die 2.27 x 2.97
Die 2.0 x 1.5
Die 1.2 x 2.4
Status
Production
Production
Production
Under development

LOW NOISE AMPLIFIERS

Technology
GaN
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
Frequency
Min GHZ
8.0
7.0
7.0
8.0
8.0
8.0
8.0
27.0
Frequency
Max GHz
12.0
13.0
13.0
12.0
12.0
12.0
12.0
32.0
NF dB
1.3
1.6
1.6
1.0
1.0
1.0
1.0
1.3
Gain dB
22.0
19.0
18.0
19.0
19.0
18.0
18.0
26.0
OP1dB dBm
19.0
10.0
9.0
7.0
7.0
7.0
7.0
20.0
Psat dBm
23.0
13.0
13.0
9.0
9.0
9.0
9.0
21.0
Voltage V
10
5
5
3
3
+3/-3
+3/-3
3
Idd (mA)
20
70
70
30
30
28
28
78
Package
mm x mm
Die 4.0 x 1.2
Die 1.6 x 1.1
QFN 3.0 x 3.0
Die 1.4 x 1.4
QFN 3.0 x 3.0
Die 1.4 x 1.4
QFN 3.0 x 3.0
Die 1.2 x 1.4
Status
December 2025
Production
Production
Production
Production
Production
Production
Under development

WIDEBAND AMPLIFIERS

Technology
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaN
GaN
GaAs
GaAs
Frequency
Min GHZ
DC
DC
DC
DC
DC
1.0
1.0
DC
DC
DC
DC
2.0
2.0
2.0
2.0
Frequency
Max GHz
28.0
28.0
27.0
45.0
40.0
20.0
20.0
40.0
50.0
45.0
70.0
18.0
18.0
20.0
20.0
Gain dB
16.0
16.0
13.0
11.0
12.0
16.0
16.0
15.0
10.0
12.0
8.0
30.0
28.0
16.0
15.0
OP1dB dBm
21.0
20.0
16.5
14.0
17.0
24.0
24.0.
18.0
16.0
16.0
10.0
-
-
15.0
15.0
Psat dBm
23.0
22.0
19.0
17.0
21.0
27.0
27.0
22.0
20.0
20.0
12.0
40.0
40.0
18.0
18.0
Drain
Voltage V
9
9
9
8
6
8
9
6
8
9
5
28
28
5
5
Idd (mA)
200
200
125
100
170
290
290
180
135
200
75
1800
1800
72
75
Package
mm x mm
Die 3.02 x 1.77
QFN 5.0 x 5.0
Die 3.97 x 1.52
Die 3.02 x 1.57
Die 2.29 x 1.28
Die 3.0 x 1.3
QFN 5.0 x 5.0
Die 2.27 x 1.57
Die 2.3 x 1.8
Die 3.1 x 1.3
Die 1.51 x 1.32
Die 3.24 x 3.24
Flange 11.43 x 17.32 x 3.15
Die 3.12 x 1.5
QFN 5.0 x 5.0
Status
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Production
Under development
Under development

ATTENUATOR

Technology
GaAs
GaAs
Frequency
Min GHZ
DC
DC
Frequency
Max GHz
18.0
18.0
LSB dB
0.9
0.9
MSB dB
14.4
14.4
Attenuation
Range dB
27.9
27.9
Bits
5 LVCMOS/TTL
5 LVCMOS/TTL
Voltage V
-7.5
-7.5
Package
mm x mm
Die 2.38 x 1.55
QFN 4.0 x 4.0
Status
Production
Production

PHASE SHIFTER

Technology
GaAs
GaAs
Frequency
Min GHZ
7.0
7.0
Frequency
Max GHz
13.0
13.0
LSB degr.
5.625
5.625
MSB degr.
180.0
180.0
Phase Range
degr.
354.375
354.375
Bits
6 LVCMOS/TTL
6 LVCMOS/TTL
Control
Voltage V
-7.5
-7.5
Package
mm x mm
Die 3.0 x 2.1
QFN 5.0 x 5.0
Status
Production
Production

CORE CHIPS

Technology
GaN
GaAs
GaAs
Frequency
Min GHZ
8.0
8.5
8.5
Frequency
Max GHz
12.0
11.0
11.0
Tx Gain dB
27.0
24.0
22.0
Tx Pout
max dBm
43.0
23.0
22.0
Rx Gain dB
21.0
20.0
19.0
Rx NF dB
2.0
5.2
5.2
Rx Pout
max dBm
23.0
19.0
19.0
Package
mm x mm
Die 4.0 x 4.8
Die 5.0 x 4.0
QFN 7.0 x 7.0
Status
December 2025
Production
Production